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Negative Differential Resistance and Instabilities in 2-D Semiconductors
. Ed(S): Balkan, Naci; Ridley, B. K.; Vickers, A. J.
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Description for Negative Differential Resistance and Instabilities in 2-D Semiconductors
Paperback. Proceedings of a NATO ARW held in Il Ciocco, Lucca, Italy, September 20-25, 1992 Editor(s): Balkan, Naci; Ridley, B. K.; Vickers, A. J. Series: NATO Science Series B. Num Pages: 454 pages, 21 black & white illustrations, biography. BIC Classification: PHF; PHFC; PNFS; THR; TJFD. Category: (P) Professional & Vocational. Dimension: 254 x 178 x 23. Weight in Grams: 861.
Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band ... Read more
Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band ... Read more
Product Details
Format
Paperback
Publication date
2012
Publisher
Springer-Verlag New York Inc. United States
Number of pages
454
Condition
New
Series
NATO Science Series B
Number of Pages
454
Place of Publication
New York, NY, United States
ISBN
9781461362203
SKU
V9781461362203
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15
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