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Process and Device Simulation for MOS-VLSI Circuits
. Ed(S): Antognetti, P.; Antoniadis, D.a.; Dutton, Robert W.; Oldham, W.g.
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Description for Process and Device Simulation for MOS-VLSI Circuits
Paperback. Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, Sogesta, Urbino, Italy, July 12-23, 1982 Editor(s): Antognetti, P.; Antoniadis, D.A.; Dutton, Robert W.; Oldham, W.G. Series: NATO Science Series E:. Num Pages: 638 pages, biography. BIC Classification: THR; TJFC. Category: (P) Professional & Vocational. Dimension: 234 x 156 x 32. Weight in Grams: 961.
P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private industries, defense de partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all ... Read more
P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private industries, defense de partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all ... Read more
Product Details
Format
Paperback
Publication date
2011
Publisher
Springer Netherlands
Number of pages
638
Condition
New
Series
NATO Science Series E:
Number of Pages
636
Place of Publication
Dordrecht, Netherlands
ISBN
9789400968448
SKU
V9789400968448
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15
Reviews for Process and Device Simulation for MOS-VLSI Circuits
`...this book is an extremely valuable collection on the crucial issues in numerical modeling of VLSI fabrication processes and devices, which will be useful to a large number of readers with diverse backgrounds.' American Scientist, 73 (1983)