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Kin P. Cheung - Plasma Charging Damage - 9781852331443 - V9781852331443
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Plasma Charging Damage

€ 256.42
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Description for Plasma Charging Damage Hardback. Provides a comprehensive coverage of the subject of plasma charging damage in VLSI circuit manufacturing. This book includes information on plasma and mechanisms of plasma damage; wear-out and breakdown of thin gate-oxides; the impact of processing equipment on damage; methods of damage measurement; damage management; and gate-oxide scaling. Num Pages: 346 pages, biography. BIC Classification: TD; TGB; TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 234 x 156 x 20. Weight in Grams: 686.
In the 50 years since the invention of transistor, silicon integrated circuit (IC) technology has made astonishing advances. A key factor that makes these advances possible is the ability to have precise control on material properties and physical dimensions. The introduction of plasma processing in pattern transfer and in thin film deposition is a critical enabling advance among other things. In state of the art silicon Ie manufacturing process, plasma is used in more than 20 different critical steps. Plasma is sometimes called the fourth state of matter (other than gas, liquid and solid). It is a mixture of ions ... Read more

Product Details

Format
Hardback
Publication date
2000
Publisher
Springer London Ltd United Kingdom
Number of pages
346
Condition
New
Number of Pages
346
Place of Publication
England, United Kingdom
ISBN
9781852331443
SKU
V9781852331443
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15

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