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Mosfet Technologies
A H Agajanian
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Description for Mosfet Technologies
paperback. Series: Ifi Data Base Library. Num Pages: black & white illustrations, bibliography. BIC Classification: GBCR; THR. Category: (G) General (US: Trade). Dimension: 254 x 178 x 21. Weight in Grams: 676.
The metal-oxide-semiconductor field-effect transistor (MOSFET) was invented in 1960. The processing technology required for suc cessful high volume fabrication became available in 1968. The use of doped polycrystalline silicon as the gate electrode, instead of aluminum or some other metal, resulted in substantial enhancement in performance. Efforts to improve the properties of MOS devices produced new structures such as: CMOS, MNOS, SOS, VMOS, DMOS, FAMOS, etc. In recent years a great deal of work has been done to study the fabrication and properties of MOSFET's. There are two reasons for this huge interest in this subiect: (1) higher density of ... Read more
The metal-oxide-semiconductor field-effect transistor (MOSFET) was invented in 1960. The processing technology required for suc cessful high volume fabrication became available in 1968. The use of doped polycrystalline silicon as the gate electrode, instead of aluminum or some other metal, resulted in substantial enhancement in performance. Efforts to improve the properties of MOS devices produced new structures such as: CMOS, MNOS, SOS, VMOS, DMOS, FAMOS, etc. In recent years a great deal of work has been done to study the fabrication and properties of MOSFET's. There are two reasons for this huge interest in this subiect: (1) higher density of ... Read more
Product Details
Format
Paperback
Publication date
2012
Publisher
Springer United States
Condition
New
Series
Ifi Data Base Library
Number of Pages
377
Place of Publication
New York, NY, United States
ISBN
9781468461220
SKU
V9781468461220
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15
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