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. Ed(S): Deal, B. E.; Helms, C. Robert - The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Proceedings of the Symposium on the Physics and Chemistry of SiO2 and the SI-SiO2 Interface.  - 9780306430329 - V9780306430329
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The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Proceedings of the Symposium on the Physics and Chemistry of SiO2 and the SI-SiO2 Interface.

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Description for The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Proceedings of the Symposium on the Physics and Chemistry of SiO2 and the SI-SiO2 Interface. Hardback. Proceedings of a symposium of the 173rd Meeting of the Electrochemical Society held in Atlanta, Georgia, May 15-20, 1988 Editor(s): Deal, B. E.; Helms, C. Robert. Num Pages: 556 pages, biography. BIC Classification: PNRH. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 254 x 178 x 32. Weight in Grams: 2860.
The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of ... Read more

Product Details

Format
Hardback
Publication date
1989
Publisher
Springer Science+Business Media United States
Number of pages
556
Condition
New
Number of Pages
556
Place of Publication
, United States
ISBN
9780306430329
SKU
V9780306430329
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15

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