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Defects in High-K Gate Dielectric Stacks
Evgeni . Ed(S): Gusev
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Description for Defects in High-K Gate Dielectric Stacks
Paperback. Proceedings of the NATO Advanced Research Workshop on Defects in Advanced High-K Dielectric Nano-Electronic Semiconductor Devices, St. Petersburg, Russia, from 11 to 14 July 2005. Editor(s): Gusev, Evgeni. Series: NATO Science Series II. Num Pages: 492 pages, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 235 x 155 x 25. Weight in Grams: 705.
The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects ... Read more
The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects ... Read more
Product Details
Format
Paperback
Publication date
2006
Publisher
Springer-Verlag New York Inc. United States
Number of pages
492
Condition
New
Series
NATO Science Series II
Number of Pages
492
Place of Publication
New York, NY, United States
ISBN
9781402043666
SKU
V9781402043666
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15
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