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Compound Semiconductors Strained Layers and Devices
. Ed(S): Willander, Magnus; Jain, Suresh C.; Overstraeten, R. Van
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Description for Compound Semiconductors Strained Layers and Devices
Paperback. Editor(s): Willander, Magnus; Jain, Suresh C.; Overstraeten, R. Van. Series: Electronic Materials Series. Num Pages: 349 pages, 8 black & white illustrations, biography. BIC Classification: TGMT; TJFD5. Category: (P) Professional & Vocational. Dimension: 235 x 155 x 19. Weight in Grams: 539.
During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu- mulation of new materials and devices with enhanced performance made pos- sible by strain. 1989-1999 have been very good years for the strained-Iayer- devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break- throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were ... Read more
During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu- mulation of new materials and devices with enhanced performance made pos- sible by strain. 1989-1999 have been very good years for the strained-Iayer- devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break- throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were ... Read more
Product Details
Format
Paperback
Publication date
2014
Publisher
Springer-Verlag New York Inc. United States
Number of pages
349
Condition
New
Series
Electronic Materials Series
Number of Pages
337
Place of Publication
New York, NY, United States
ISBN
9781461370000
SKU
V9781461370000
Shipping Time
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Ref
99-15
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