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Liou, J.J.; Ortiz-Conde, Adelmo (Electronics Engineering Dept., University Of Simon Bolivar, Caracas, Venezuela); Garcia-Sanchez, Francisco (Electron - Analysis and Design of MOSFETs - 9780412146015 - V9780412146015
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Analysis and Design of MOSFETs

€ 194.09
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Description for Analysis and Design of MOSFETs Hardback. Devoted to the spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). This book is extensively referenced, and contains more than 180 illustrations. Num Pages: 349 pages, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 234 x 156 x 22. Weight in Grams: 1540.
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, ... Read more

Product Details

Format
Hardback
Publication date
1998
Publisher
Chapman and Hall United Kingdom
Number of pages
349
Condition
New
Number of Pages
349
Place of Publication
London, United Kingdom
ISBN
9780412146015
SKU
V9780412146015
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15

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