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Palankovski, Vassil; Quay, Rudiger - Analysis and Simulation of Heterostructure Devices - 9783211405376 - V9783211405376
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Analysis and Simulation of Heterostructure Devices

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Description for Analysis and Simulation of Heterostructure Devices Hardback. Deals with the physical modeling of heterostructure devices. This book presents a detailed discussion of physical models and parameters for compound semiconductors including the relevant aspects of modern submicron heterostructure devices. Series: Computational Microelectronics. Num Pages: 289 pages, biography. BIC Classification: TJFD5. Category: (G) General (US: Trade); (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 234 x 156 x 19. Weight in Grams: 631.
Communication and information systems are subject to rapid and highly so­ phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis­ tors (HEMTs), are among the fastest and most advanced high-frequency devices. They satisfy the requirements for low power consumption, medium integration, low cost in large quantities, and high-speed operation capabilities in circuits. In the very high-frequency range, cut-off frequencies up to 500 GHz [557] have been reported on the device level. HEMTs and HBTs are very suitable for high­ efficiency power amplifiers at 900 MHz as well as for data rates higher ... Read more

Product Details

Format
Hardback
Publication date
2003
Publisher
Springer Verlag GmbH Austria
Number of pages
289
Condition
New
Series
Computational Microelectronics
Number of Pages
289
Place of Publication
Vienna, Austria
ISBN
9783211405376
SKU
V9783211405376
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15

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