Carrier Transport in Nanoscale MOS Transistors
Hideaki Tsuchiya
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Description for Carrier Transport in Nanoscale MOS Transistors
Hardback. Num Pages: 264 pages. BIC Classification: TBN; TG; TJFD3. Category: (P) Professional & Vocational. Dimension: 250 x 169 x 17. Weight in Grams: 552.
A comprehensive advanced level examination of the transport theory of nanoscale devices
A comprehensive advanced level examination of the transport theory of nanoscale devices
- Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport
- Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations
- The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
Product Details
Publisher
John Wiley & Sons Inc
Format
Hardback
Publication date
2016
Condition
New
Weight
551g
Number of Pages
450
Place of Publication
, United States
ISBN
9781118871669
SKU
V9781118871669
Shipping Time
Usually ships in 7 to 11 working days
Ref
99-27
About Hideaki Tsuchiya
Hideaki Tsuchiya, Associate Professor, Kobe University, Japan. Professor Tsuchiya received his Ph. D in electronic engineering from Kobe University, Kobe, Japan, in 1993. He has lectured for over ten years to graduate students on the Advanced Theory of Integrated Nanoscale Devices. His research interests focus on quantum transport simulation and atomistic modeling of nanoscale devices. He has co-written over 100 ... Read more
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