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Early Stages of Oxygen Precipitation in Silicon
R. . Ed(S): Jones
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Description for Early Stages of Oxygen Precipitation in Silicon
paperback. Proceedings of the NATO Advanced Research Workshop, Exeter, U.K., March 26-29, 1996 Editor(s): Jones, R. Series: NATO Science Partnership Subseries: 3. Num Pages: 552 pages, biography. BIC Classification: PHF; PNFC; PNFS; TGMT; TJFD. Category: (P) Professional & Vocational. Dimension: 240 x 160 x 28. Weight in Grams: 870.
It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant as silicon is one of the most important technological ma terials in everyday use and oxygen is its most common impurity. However, ... Read more
It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant as silicon is one of the most important technological ma terials in everyday use and oxygen is its most common impurity. However, ... Read more
Product Details
Format
Paperback
Publication date
2011
Publisher
Springer Netherlands
Number of pages
552
Condition
New
Series
NATO Science Partnership Subseries: 3
Number of Pages
552
Place of Publication
Dordrecht, Netherlands
ISBN
9789401066457
SKU
V9789401066457
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Ref
99-15
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