Dr. Vladislav Vashchenko received MS, Engineer-Physicist (1986) followed by “Ph.D. in Physics of Semiconductors” (1990) from Moscow Institute of Physics and Technology for the study of self-organization phenomena in semiconductor structures under breakdown. Since 1984 he was working in reliability department of State Research Institute “Pulsar” (Moscow) occupying positions from the student intern to head of laboratory. In 1997 he ... Read morewas awarded the “Doctor of Science in Microelectronics” degree for the cycle of studies and new solutions of the reliability problems in power GaAs MESFET’s, microwave silicon devices and the developed test methods. In the period 1995-1997 he managed the work on contracts for high reliability components for Russian Space Agency, commercial and military customers. In 2000 he joined Advanced Process Development Group in National Semiconductor Corp. to work on design of the ESD protection solutions for analog products. Currently he is leader and manager of R&D group responsible for ESD development for new processes and products. His current research interests are mainly focused on the power devices, device level reliability, ESD solutions, physical process and device simulation for ESD. His studies are widely presented in major device research forums. He author of 108 U.S. patents and over 80 research and review papers in the fields of reliability and ESD. Show Less