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Fundamentals of III-V Devices
William Liu
€ 235.73
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Description for Fundamentals of III-V Devices
Hardcover. An introductory guide to heterojunction bipolar and field effect transistors, this handbook addresses the industry's growing need for faster, low-powered devices for use in cellular and wireless communications. These devices replace silicon bipolar transistors, promising superior performance in less time. Num Pages: 520 pages, Illustrations. BIC Classification: TJFC; TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 238 x 164 x 34. Weight in Grams: 898.
A systematic, accessible introduction to III-V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III-V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors (HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs). An excellent introduction ... Read more
A systematic, accessible introduction to III-V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III-V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors (HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs). An excellent introduction ... Read more
Product Details
Format
Hardback
Publication date
1999
Publisher
John Wiley and Sons Ltd United States
Number of pages
520
Condition
New
Number of Pages
520
Place of Publication
, United States
ISBN
9780471297000
SKU
V9780471297000
Shipping Time
Usually ships in 7 to 11 working days
Ref
99-50
About William Liu
WILLIAM LIU is a senior member of the technical staff at Texas Instruments, where he has worked since obtaining his PhD in electrical engineering from Stanford University in 1991. Dr. Liu has published numerous papers, reviews, and chapter contributions on HBTs. He holds thirteen U.S. patents on device and circuit design in various HBT technologies. He is a senior member ... Read more
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