Stock image for illustration purposes only - book cover, edition or condition may vary.
MOS (metal Oxide Semiconductor) Physics and Technology
E. H. Nicollian
€ 203.97
FREE Delivery in Ireland
Description for MOS (metal Oxide Semiconductor) Physics and Technology
Paperback. This reference explores MOS (Metal Oxide Semiconductors) which are the ceramic semiconductors that are responsible for today's electronic revolution. These materials' ability to hold an electric charge allowed the transistor to replace the vacuum tube and paved the way for the miniaturization of electronic goods. Num Pages: 928 pages, illustrations. BIC Classification: PHFC; TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 235 x 157 x 51. Weight in Grams: 1384.
Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.
Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.
Product Details
Format
Paperback
Publication date
2002
Publisher
John Wiley & Sons Inc United States
Number of pages
928
Condition
New
Number of Pages
928
Place of Publication
, United States
ISBN
9780471430797
SKU
V9780471430797
Shipping Time
Usually ships in 7 to 11 working days
Ref
99-50
About E. H. Nicollian
E. H. Nicollian (deceased) was a?researcher at AT&T Bell Laboratories, Murray Hill, NJ. John R. Brews, currently Professor of Electrical Engineering, University of Arizona, Tucson AZ, was a researcher at AT&T Bell Laboratories, Murray Hill, NJ.
Reviews for MOS (metal Oxide Semiconductor) Physics and Technology