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Strain-induced Effects in Advanced MOSFETs
Viktor Sverdlov
€ 181.96
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Description for Strain-induced Effects in Advanced MOSFETs
Hardback. This book covers modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is explored in devices using analytical k.p and numerical pseudopotential methods. Includes a rigorous overview of transport modeling. Series: Computational Microelectronics. Num Pages: 252 pages, 50 black & white tables, biography. BIC Classification: TJF. Category: (P) Professional & Vocational. Dimension: 244 x 170 x 15. Weight in Grams: 629.
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
Product Details
Format
Hardback
Publication date
2010
Publisher
Springer Verlag GmbH Austria
Number of pages
252
Condition
New
Series
Computational Microelectronics
Number of Pages
252
Place of Publication
Vienna, Austria
ISBN
9783709103814
SKU
V9783709103814
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15
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