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Croon, Jeroen A.; Sansen, Willy M. C.; Maes, Herman E. - Matching Properties of Deep Sub-Micron Mos Transistors - 9780387243146 - V9780387243146
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Matching Properties of Deep Sub-Micron Mos Transistors

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Description for Matching Properties of Deep Sub-Micron Mos Transistors Hardback. Examines the phenomenon of the matching properties of Deep Sub-Micron MOS Transistors. This book presents a study at several levels of abstraction, using a simple and physics-based model that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. Series: The Springer International Series in Engineering and Computer Science. Num Pages: 206 pages, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational. Dimension: 232 x 156 x 14. Weight in Grams: 488.

Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction:

A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter.

The most commonly ... Read more

The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance.

The impact of process parameters on the matching properties is discussed.

The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor.

Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.

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Product Details

Format
Hardback
Publication date
2005
Publisher
Springer-Verlag New York Inc. United States
Number of pages
206
Condition
New
Series
The Springer International Series in Engineering and Computer Science
Number of Pages
206
Place of Publication
New York, NY, United States
ISBN
9780387243146
SKU
V9780387243146
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15

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