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. Ed(S): Demkov, Alexander A. (Freescale Semiconductor Inc., Austin, Texas); Navrotsky, Alexandra - Materials Fundamentals of Gate Dielectrics - 9781402030772 - V9781402030772
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Materials Fundamentals of Gate Dielectrics

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Description for Materials Fundamentals of Gate Dielectrics Hardback. Presents the fundamentals of novel gate dielectrics that are introduced into semiconductor manufacturing to ensure the continuous scaling of CMOS devices. This book provides chapters that give a description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Editor(s): Demkov, Alexander A. (Freescale Semiconductor Inc., Austin, Texas); Navrotsky, Alexandra. Num Pages: 484 pages, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational. Dimension: 235 x 155 x 26. Weight in Grams: 851.
According to Bernie Meyerson, IBM's chief technology of?cer, the traditional sc- ing of semiconductor manufacturing processes died somewhere between the 1- and 90-nanometer nodes. One of the prime reasons is the low dielectric constant of SiO - thechoice dielectricof all modern electronics. This book presents materials 2 fundamentals of the novel gate dielectrics that are being introduced into semic- ductor manufacturing to ensure the Moore's law scaling of CMOS devices. This is a very rapidly evolving?eld of research and we try to focus on the basicundersta- ing of structure, thermodynamics, and electronic properties of these materials that determine their performance ... Read more

Product Details

Format
Hardback
Publication date
2005
Publisher
Springer-Verlag New York Inc. United States
Number of pages
484
Condition
New
Number of Pages
476
Place of Publication
New York, NY, United States
ISBN
9781402030772
SKU
V9781402030772
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15

About . Ed(S): Demkov, Alexander A. (Freescale Semiconductor Inc., Austin, Texas); Navrotsky, Alexandra
Alexander Demkov received his Ph.D. in Physics at Arizona State University in 1995 secializing in electronic structure theory. His postdoctoral research was focused on electronic properties of zeolites. Het joined Motorola R&D in 1997, and has been working on materials problems of advanced CMOS gate stack, and quantum transport. He has authored over 60 papers, and has two issued patents. ... Read more

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