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Abu-Rahma, Mohamed; Anis, Mohab - Nanometer Variation-Tolerant Sram - 9781493902200 - V9781493902200
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Nanometer Variation-Tolerant Sram

€ 126.58
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Description for Nanometer Variation-Tolerant Sram Paperback. This essential reference combines state-of-the-art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies. It shows designers how to apply practical techniques that optimize memory yield. Num Pages: 188 pages, 5 black & white tables, biography. BIC Classification: TJFC; UKS. Category: (P) Professional & Vocational. Dimension: 235 x 155 x 10. Weight in Grams: 297.

Variability is one of the most challenging obstacles for IC design in the nanometer regime.  In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density.  With the drastic increase in memory densities, lower supply voltages, and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power.

This book is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory ... Read more

  • Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques;
  • Discusses Impact of device related process variations and how they affect circuit and system performance, from a design point of view;
  • Helps designers optimize memory yield, with practical statistical design methodologies and yield estimation techniques.
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Product Details

Format
Paperback
Publication date
2014
Publisher
Springer-Verlag New York Inc. United States
Number of pages
188
Condition
New
Number of Pages
172
Place of Publication
New York, United States
ISBN
9781493902200
SKU
V9781493902200
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15

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