Nanoscale Transistors
Lundstrom, Mark; Guo, Jing
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Description for Nanoscale Transistors
Hardback. To push MOSFETs to their scaling limits and to explore devices that may complement, a clear understanding of device physics at nanometer scale is necessary. This title provides a description on the development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Num Pages: 226 pages, 106 black & white illustrations, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational. Dimension: 234 x 156 x 14. Weight in Grams: 498.
Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960's, channel lengths were about 10 micrometers, but researchers are now building transistors with channel lengths of less than 10 nanometers. New kinds of transistors and other devices are also being explored. Nanoscale MOSFET engineering continues, however, to be dominated by concepts and approaches originally developed to treat microscale devices. To push MOSFETs to their limits and to explore devices that may complement or even supplant them, a clear understanding of device ... Read more
Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960's, channel lengths were about 10 micrometers, but researchers are now building transistors with channel lengths of less than 10 nanometers. New kinds of transistors and other devices are also being explored. Nanoscale MOSFET engineering continues, however, to be dominated by concepts and approaches originally developed to treat microscale devices. To push MOSFETs to their limits and to explore devices that may complement or even supplant them, a clear understanding of device ... Read more
Product Details
Format
Hardback
Publication date
2005
Publisher
Springer-Verlag New York Inc. United States
Number of pages
226
Condition
New
Number of Pages
218
Place of Publication
New York, NY, United States
ISBN
9780387280028
SKU
V9780387280028
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15
About Lundstrom, Mark; Guo, Jing
Mark S. Lundstrom is the Scifres Distinguished Professor of Electrical and Computer Engineering at Purdue University where he also directs the NSF Network for Computational Nanotechnology. His current research interests center on the physics of semiconductor devices, especially nanoscale transistors. His previous work includes studies of heterostructure devices, solar cells, heterojunction bipolar transistors and semiconductor lasers. During the course of ... Read more
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