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. Ed(S): Itoh, Kiyoo; Horiguchi, Masashi; Tanaka, Hitoshi - Ultra-Low Voltage Nano-Scale Memories - 9781441941244 - V9781441941244
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Ultra-Low Voltage Nano-Scale Memories

€ 139.41
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Description for Ultra-Low Voltage Nano-Scale Memories Paperback. The goal of this book is to provide a detailed explanation of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. The authors share their knowledge and cover everything from the basics to the leading edge. Editor(s): Itoh, Kiyoo; Horiguchi, Masashi; Tanaka, Hitoshi. Series: Integrated Circuits and Systems. Num Pages: 346 pages, 290 black & white illustrations, biography. BIC Classification: TBN; TJFC. Category: (P) Professional & Vocational. Dimension: 234 x 156 x 18. Weight in Grams: 551.

Ultra-Low Voltage Nano-Scale Memories provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve problems with internal power-supply managements are ... Read more

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Product Details

Format
Paperback
Publication date
2010
Publisher
Springer-Verlag New York Inc. United States
Number of pages
346
Condition
New
Series
Integrated Circuits and Systems
Number of Pages
346
Place of Publication
New York, NY, United States
ISBN
9781441941244
SKU
V9781441941244
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15

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