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VLSI Fabrication Principles
Sorab K. Ghandhi
€ 222.25
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Description for VLSI Fabrication Principles
Hardcover. Integrating discussion of elemental (silicon) and compound (gallium arsenide) technologies, this monograph explains why the two materials are particularly suited to Very Large Scale Integrated (VLSI) schemes. The fabrication principles for circuits such as CMOS, MOS and PET are emphasized. Num Pages: 864 pages, Illustrations. BIC Classification: TGM; TJFC; UY. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (XV) Technical / Manuals. Dimension: 240 x 163 x 44. Weight in Grams: 1292.
Fully updated with the latest technologies, this edition covers thefundamental principles underlying fabrication processes forsemiconductor devices along with integrated circuits made fromsilicon and gallium arsenide. Stresses fabrication criteria forsuch circuits as CMOS, bipolar, MOS, FET, etc. These diversetechnologies are introduced separately and then consolidated intocomplete circuits.
An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment.
Fully updated with the latest technologies, this edition covers thefundamental principles underlying fabrication processes forsemiconductor devices along with integrated circuits made fromsilicon and gallium arsenide. Stresses fabrication criteria forsuch circuits as CMOS, bipolar, MOS, FET, etc. These diversetechnologies are introduced separately and then consolidated intocomplete circuits.
An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment.
Product Details
Format
Hardback
Publication date
1994
Publisher
John Wiley and Sons Ltd United States
Number of pages
864
Condition
New
Number of Pages
864
Place of Publication
, United States
ISBN
9780471580058
SKU
V9780471580058
Shipping Time
Usually ships in 7 to 11 working days
Ref
99-50
About Sorab K. Ghandhi
Sorab K. Ghandhi is a professor Emeritus at Rensselaer Polytechnic Institute known for his pioneering work in electrical engineering and microelectronics education, and in the research and development of Organometallic Vapor Phase Epitaxy for compound semiconductors.
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