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Emerging Resistive Switching Memories
Jianyong Ouyang
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Description for Emerging Resistive Switching Memories
paperback. Series: SpringerBriefs in Materials. Num Pages: 101 pages, 32 black & white illustrations, 41 colour illustrations, 10 colour tables, biography. BIC Classification: TBN; TGM; TJFC; UKS. Category: (P) Professional & Vocational. Dimension: 235 x 155 x 6. Weight in Grams: 174.
This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
Product Details
Format
Paperback
Publication date
2016
Publisher
Springer Switzerland
Number of pages
101
Condition
New
Series
SpringerBriefs in Materials
Number of Pages
93
Place of Publication
Cham, Switzerland
ISBN
9783319315706
SKU
V9783319315706
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15
About Jianyong Ouyang
Jianyong Ouyang is an Associate Professor in the Department of Materials Science and Engineering at National University of Singapore.
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