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. Ed(S): Garfunkel, Eric; Gusev, Evgeni; Vul', Alexander Ya - Fundamental Aspects of Ultrathin Dielectrics on SI-Based Devices - 9780792350088 - V9780792350088
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Fundamental Aspects of Ultrathin Dielectrics on SI-Based Devices

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Description for Fundamental Aspects of Ultrathin Dielectrics on SI-Based Devices Paperback. Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997 Editor(s): Garfunkel, Eric; Gusev, Evgeni; Vul', Alexander Ya. Series: NATO Science Partnership Subseries: 3. Num Pages: 507 pages, 114 black & white illustrations, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 240 x 160 x 26. Weight in Grams: 1590.
An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in ... Read more

Product Details

Format
Paperback
Publication date
1998
Publisher
Kluwer Academic Publishers United States
Number of pages
507
Condition
New
Series
NATO Science Partnership Subseries: 3
Number of Pages
507
Place of Publication
Dordrecht, Netherlands
ISBN
9780792350088
SKU
V9780792350088
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15

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