×


 x 

Shopping cart
Hellings, Geert; Meyer, Kristin de - High Mobility and Quantum Well Transistors: Design and TCAD Simulation - 9789400795693 - V9789400795693
Stock image for illustration purposes only - book cover, edition or condition may vary.

High Mobility and Quantum Well Transistors: Design and TCAD Simulation

€ 117.75
FREE Delivery in Ireland
Description for High Mobility and Quantum Well Transistors: Design and TCAD Simulation paperback. This book explores the use of high mobility semiconductors such as germanium and III-V materials, the need to redesign transistors to work with such materials and the appropriateness of Quantum Well-based transistors for this new stage of transistor evolution. Series: Springer Series in Advanced Microelectronics. Num Pages: 140 pages, 15 black & white tables, biography. BIC Classification: TDPB; TJFC; TJFD; TJFD5. Category: (P) Professional & Vocational. Dimension: 235 x 155 x 9. Weight in Grams: 256.
For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials.

High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD ... Read more

Product Details

Format
Paperback
Publication date
2015
Publisher
Springer Netherlands
Number of pages
140
Condition
New
Series
Springer Series in Advanced Microelectronics
Number of Pages
140
Place of Publication
Dordrecht, Netherlands
ISBN
9789400795693
SKU
V9789400795693
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15

About Hellings, Geert; Meyer, Kristin de
Geert Hellings received the B.S. and M.S. degrees in Electrical Engineering from the KU Leuven, Belgium, in 2007. His master thesis was on III-nitride-based UV detectors for space applications. He obtained the PhD degree from the Electrical Engineering Department (ESAT), Integrated Systems Division (INSYS) at the University of Leuven, Belgium. During his PhD, he worked on the integration of high-mobility ... Read more

Reviews for High Mobility and Quantum Well Transistors: Design and TCAD Simulation

Goodreads reviews for High Mobility and Quantum Well Transistors: Design and TCAD Simulation


Subscribe to our newsletter

News on special offers, signed editions & more!