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High Permittivity Gate Dielectric Materials
Samares . Ed(S): Kar
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Description for High Permittivity Gate Dielectric Materials
Paperback. This book covers all aspects of the physics and the technology of high permittivity gate dielectric materials. Each chapter covers basic topics, reviews the literature, and details the research contributions of the author's group to the subject. Editor(s): Kar, Samares. Series: Springer Series in Advanced Microelectronics. Num Pages: 521 pages, 157 black & white illustrations, 168 colour illustrations, biography. BIC Classification: PNFS; TBC; TJF; TJFD. Category: (P) Professional & Vocational. Dimension: 235 x 155 x 27. Weight in Grams: 795.
"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating ... Read moreto the current status of the technology and our scientific understanding and the future prospects."
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Product Details
Publisher
Springer-Verlag Berlin and Heidelberg GmbH & Co. KG Germany
Series
Springer Series in Advanced Microelectronics
Place of Publication
Berlin, Germany
Shipping Time
Usually ships in 15 to 20 working days
About Samares . Ed(S): Kar
Samares Kar was born in Kolkata, India in 1942. He received the B.Tech. degree in electrical engineering in 1962 from the Indian Institute of Technology in Kharagpur, India, and the M.S. and Ph.D. degrees in electrical engineering from Lehigh University in Bethlehem, Pennsylvania, USA in 1968 and 1970, respectively. During the period 1963-1965, he worked in West ... Read moreGermany, first as a design engineer with the Hamburger Transformatorenbau in Hamburg, and then as a project engineer with the Continental Elektroindustrie in Rheydt. During the period 1971-1974, he was a member of the scientific staff at the Fraunhofer Institute of Applied Solid State Physics in Freiburg, West Germany. In 1975, he joined the Indian Institute of Technology in Kanpur, where he was a professor of electrical engineering and materials science from 1980 till 2004, an emeritus fellow between 2004 and 2006, and currently is an R & D consultant. In 1979, he was at The Pennsylvania State University, University Park, Pennsylvania as a visiting associate professor of engineering science, and in 1981, he was at Lehigh University, Bethlehem as a visiting professor of electrical engineering. His research interests have included MOS tunnel devices, Si-SiO2 interface states, solar cells, ion-beam induced defects, organic monolayers, high-K gate dielectrics, and MOS/MIS parameter extraction. His seminal work on ultrathin (2-4 nm) SiO2 gate dielectrics, carried out more than three decades ago, provides some basic theory and tools for the current and future generation MOS nano-transistors, in particular, on issues related to the ultimate gate dielectric thinness, electrical characterization, and metal-related interface states. Dr. Kar was/is the lead organizer of The First, Second, Third, Fourth, and Fifth International Symposium on High Dielectric Constant Materials held respectively in October 2002 in Salt Lake City, UT, in October 2003 in Orlando, FL, in October 2005 in Los Angeles, CA., in October 2006 in Cancun, Mexico, and in October 2007 in Washington, DC. He is the lead editor of the four volumes of the book entitled "Physics and Technology of High-K Gate Dielectrics". Show Less
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