Hot Carrier Design Considerations for MOS Devices and Circuits
Cheng . Ed(S): Wang
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Description for Hot Carrier Design Considerations for MOS Devices and Circuits
Paperback. Editor(s): Wang, Cheng. Num Pages: 350 pages, 60 black & white illustrations, biography. BIC Classification: PD. Category: (P) Professional & Vocational. Dimension: 229 x 152 x 18. Weight in Grams: 521.
As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engineers ... Read more
As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engineers ... Read more
Product Details
Format
Paperback
Publication date
2012
Publisher
Springer-Verlag New York Inc. United States
Number of pages
350
Condition
New
Number of Pages
334
Place of Publication
New York, NY, United States
ISBN
9781468485493
SKU
V9781468485493
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15
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