.png){kind=logo}
Stock image for illustration purposes only - book cover, edition or condition may vary.
Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
Peter Pichler
€ 375.85
FREE Delivery in Ireland
Description for Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
Hardback. Contains a comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, this book gives a comprehensive introduction into the relevant fundamental concepts. Series: Computational Microelectronics. Num Pages: 554 pages, 40 black & white illustrations, biography. BIC Classification: TGM. Category: (P) Professional & Vocational. Dimension: 254 x 178 x 31. Weight in Grams: 1129.
Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis ... Read more
Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis ... Read more
Product Details
Format
Hardback
Publication date
2004
Publisher
Springer Verlag GmbH Austria
Number of pages
554
Condition
New
Series
Computational Microelectronics
Number of Pages
554
Place of Publication
Vienna, Austria
ISBN
9783211206874
SKU
V9783211206874
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15
Reviews for Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon