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Low Power and Reliable SRAM Memory Cell and Array Design
. Ed(S): Ishibashi, Koichiro; Osada, Kenichi
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Description for Low Power and Reliable SRAM Memory Cell and Array Design
Hardback. The recent development of advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses issues in the design of SRAM memory cells for advanced CMOS technology, including variability, leakage and reliability. Editor(s): Ishibashi, Koichiro; Osada, Kenichi. Series: Springer Series in Advanced Microelectronics. Num Pages: 156 pages, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational. Dimension: 235 x 155 x 13. Weight in Grams: 403.
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
Product Details
Format
Hardback
Publication date
2011
Publisher
Springer-Verlag Berlin and Heidelberg GmbH & Co. KG Germany
Number of pages
156
Condition
New
Series
Springer Series in Advanced Microelectronics
Number of Pages
144
Place of Publication
Berlin, Germany
ISBN
9783642195679
SKU
V9783642195679
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15
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