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. Ed(S): Pacchioni, Gianfranco; Skuja, Linards; Griscom, David L. - Defects in SiO2 and Related Dielectrics: Science and Technology - 9780792366867 - V9780792366867
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Defects in SiO2 and Related Dielectrics: Science and Technology

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Description for Defects in SiO2 and Related Dielectrics: Science and Technology Paperback. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Editor(s): Pacchioni, Gianfranco; Skuja, Linards; Griscom, David L. Series: NATO Science Series II. Num Pages: 624 pages, 87 black & white illustrations, biography. BIC Classification: PHK; TGM. Category: (G) General (US: Trade); (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 234 x 153 x 20. Weight in Grams: 892.
Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies.
This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.

Product Details

Format
Paperback
Publication date
2000
Publisher
Kluwer Academic Publishers United States
Number of pages
624
Condition
New
Series
NATO Science Series II
Number of Pages
624
Place of Publication
Dordrecht, Netherlands
ISBN
9780792366867
SKU
V9780792366867
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15

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