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Fundamental Aspects of Silicon Oxidation
Yves Jean . Ed(S): Chabal
€ 128.93
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Description for Fundamental Aspects of Silicon Oxidation
Hardback. Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. This title reports on the advances both at Lucent Technology and in academic research. It is of interest to researchers and advanced students. Editor(s): Chabal, Yves Jean. Series: Springer Series in Materials Science. Num Pages: 262 pages, 126 black & white illustrations, 21 colour illustrations, 8 black & white tables, biograp. BIC Classification: PNRX; TGM. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 235 x 155 x 18. Weight in Grams: 635.
The idea for a book dealing specifically with elementary processes in silicon oxidation was formulated after a stimulating symposium that I organized at the American Physical Society meeting in March, 1998. The symposium, en titled "Dynamics of silicon etching and oxidation", explored the mechanisms governing silicon oxidation. With three experimental talks (Hines, Weldon and Gibson) and two theoretical presentations (Pasquarello and Pantelides), it provided a good cross-section of the recent efforts to characterize the in terfacial region of silicon oxide grown on silicon. The novelty of this work comes from the present experimental and theo retical advances that allow the ... Read more
The idea for a book dealing specifically with elementary processes in silicon oxidation was formulated after a stimulating symposium that I organized at the American Physical Society meeting in March, 1998. The symposium, en titled "Dynamics of silicon etching and oxidation", explored the mechanisms governing silicon oxidation. With three experimental talks (Hines, Weldon and Gibson) and two theoretical presentations (Pasquarello and Pantelides), it provided a good cross-section of the recent efforts to characterize the in terfacial region of silicon oxide grown on silicon. The novelty of this work comes from the present experimental and theo retical advances that allow the ... Read more
Product Details
Format
Hardback
Publication date
2001
Publisher
Springer-Verlag Berlin and Heidelberg GmbH & Co. KG Germany
Number of pages
262
Condition
New
Series
Springer Series in Materials Science
Number of Pages
262
Place of Publication
Berlin, Germany
ISBN
9783540416821
SKU
V9783540416821
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15
Reviews for Fundamental Aspects of Silicon Oxidation
From the reviews: "Silicon remains the dominant microelectronic material … . One of the reasons for this is the ‘extraordinary perfection’ of its interface with its thermally grown oxide. … The book provides a valuable snapshot as at early 2000 of the range of diverse approaches, both theoretical and experimental, being applied … by some of the leading ... Read more