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Molecular Beam Epitaxy of III-V Compounds
Ploog, Klaus; Graf, K.
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Description for Molecular Beam Epitaxy of III-V Compounds
Paperback. Num Pages: 222 pages, 1 black & white illustrations, biography. BIC Classification: PHF; PN. Category: (P) Professional & Vocational. Dimension: 229 x 152 x 12. Weight in Grams: 322.
Epitaxial growth and electronic properties of semiconductor thin films are becoming increasingly important for fundamental and applied research and for device applications. This book contains a comprehensive collection of over 1500 references covering the first 25 years of molecular beam epitaxy of III-V compound semiconductors. Molecular beam epitaxy is a versatile thin- film growth technique which emerged from the 'Three-temperature method' de- veloped in the 1950s and from surface kinetic studies performed in the 1960s. III-V semiconductors such as GaAs, AlAs, (Galn)As, InP, etc. , play an important role in the application to optoelectronic and high-speed devices. Over the past ... Read more
Epitaxial growth and electronic properties of semiconductor thin films are becoming increasingly important for fundamental and applied research and for device applications. This book contains a comprehensive collection of over 1500 references covering the first 25 years of molecular beam epitaxy of III-V compound semiconductors. Molecular beam epitaxy is a versatile thin- film growth technique which emerged from the 'Three-temperature method' de- veloped in the 1950s and from surface kinetic studies performed in the 1960s. III-V semiconductors such as GaAs, AlAs, (Galn)As, InP, etc. , play an important role in the application to optoelectronic and high-speed devices. Over the past ... Read more
Product Details
Format
Paperback
Publication date
1984
Publisher
Springer-Verlag Berlin and Heidelberg GmbH & Co. KG Germany
Number of pages
222
Condition
New
Number of Pages
222
Place of Publication
Berlin, Germany
ISBN
9783540131779
SKU
V9783540131779
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15
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