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Neutron Transmutation Doping of Semiconductor Materials
Robert D. Larrabee
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Description for Neutron Transmutation Doping of Semiconductor Materials
Paperback. Num Pages: 338 pages, 100 black & white illustrations, biography. BIC Classification: THR. Category: (P) Professional & Vocational. Dimension: 254 x 178 x 19. Weight in Grams: 677.
viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published ... Read more
viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published ... Read more
Product Details
Format
Paperback
Publication date
2012
Publisher
Springer-Verlag New York Inc. United States
Number of pages
338
Condition
New
Number of Pages
338
Place of Publication
New York, NY, United States
ISBN
9781461296751
SKU
V9781461296751
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15
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