Novel Three-State Quantum Dot Gate Field Effect Transistor
Supriya Karmakar
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Description for Novel Three-State Quantum Dot Gate Field Effect Transistor
Paperback. This book explores fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter, introduces a circuit model of QDGFET based on Berkley Short Channel IGFET model and simulation of advanced circuits. Num Pages: 148 pages, 72 black & white illustrations, 49 colour illustrations, 24 black & white tables, biograp. BIC Classification: PHQ; TBN; TDPB; TJFC. Category: (P) Professional & Vocational. Dimension: 235 x 155 x 8. Weight in Grams: 238.
The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.
Product Details
Format
Paperback
Publication date
2016
Publisher
Springer, India, Private Ltd India
Number of pages
148
Condition
New
Number of Pages
134
Place of Publication
New Delhi, India
ISBN
9788132234906
SKU
V9788132234906
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15
About Supriya Karmakar
Dr. Supriya Karmakar is currently working as an Engineer in Intel Corporation, Hillsboro, Oregon, USA. Dr. Karmakar completed his PhD in Electrical Engineering from University of Connecticut in the year 2011. The specialization was "Novel Three State Quantum Dot Gate Field Effect Transistor: Fabrication, Modeling and Applications". He has five years experience in semiconductor device fabrication and circuit modeling in ... Read more
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