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GaP Heteroepitaxy on Si(100)
Henning Doscher
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Description for GaP Heteroepitaxy on Si(100)
Hardback. This thesis offers a key contribution to improving optoelectronic devices and performance of photovoltaic materials. It reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. Series: Springer Theses. Num Pages: 157 pages, 47 black & white illustrations, 33 colour illustrations, biography. BIC Classification: PHK; TJFD5; TTB. Category: (P) Professional & Vocational. Dimension: 235 x 155 x 13. Weight in Grams: 409.
Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure ... Read more
Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure ... Read more
Product Details
Format
Hardback
Publication date
2013
Publisher
Springer International Publishing AG Switzerland
Number of pages
157
Condition
New
Series
Springer Theses
Number of Pages
143
Place of Publication
Cham, Switzerland
ISBN
9783319028798
SKU
V9783319028798
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15
About Henning Doscher
Dr. Henning Döscher TU Ilmenau Institut für Physik, FG Photovoltaik Ehrenbergstr. 29 98693 Ilmenau
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