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Point Defects in Semiconductors
Michel Lannoo
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Description for Point Defects in Semiconductors
Paperback. Series: Springer Series in Solid-State Sciences. Num Pages: 282 pages, biography. BIC Classification: PHFC. Category: (P) Professional & Vocational. Dimension: 234 x 156 x 15. Weight in Grams: 445.
From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study its interesting electronic properties. Thus in these covalent crystals, the electronic structure is only weakly coupled with the atomic vibrations; one-electron Bloch functions can be used and their energy bands can be accurately computed in the neighborhood of the energy gap between the valence and conduction bands; nand p doping can be obtained by introducing substitutional impurities which only introduce shallow donors and acceptors and can be studied by an ... Read more
From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study its interesting electronic properties. Thus in these covalent crystals, the electronic structure is only weakly coupled with the atomic vibrations; one-electron Bloch functions can be used and their energy bands can be accurately computed in the neighborhood of the energy gap between the valence and conduction bands; nand p doping can be obtained by introducing substitutional impurities which only introduce shallow donors and acceptors and can be studied by an ... Read more
Product Details
Format
Paperback
Publication date
2012
Publisher
Springer-Verlag Berlin and Heidelberg GmbH & Co. KG Germany
Number of pages
282
Condition
New
Series
Springer Series in Solid-State Sciences
Number of Pages
265
Place of Publication
Berlin, Germany
ISBN
9783642815768
SKU
V9783642815768
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15
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