Technology of Gallium Nitride Crystal Growth
. Ed(S): Ehrentraut, Dirk; Meissner, Elke; Bockowski, Michal
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Description for Technology of Gallium Nitride Crystal Growth
hardcover. This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Editor(s): Ehrentraut, Dirk; Meissner, Elke; Bockowski, Michal. Series: Springer Series in Materials Science. Num Pages: 348 pages, 200 black & white illustrations, biography. BIC Classification: PHFC; TJFD. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 235 x 155 x 23. Weight in Grams: 747.
Semiconductor materials have been studied intensively since the birth of silicon technology more than 50 years ago. The ability to physically and chemically t- lor their properties with precision is the key factor responsible for the electronic revolution in our society over the past few decades. Semiconductor material s- tems (like silicon and GaAs-related materials) have now matured and found well established applications in electronics, optoelectronics, and several other ?elds. Other materials such as III-Nitrides were developed later, in response to needs that the above mentioned semiconductors were unable to ful?ll. The properties of I- nitrides (AlN, GaN InN, and ... Read more
Semiconductor materials have been studied intensively since the birth of silicon technology more than 50 years ago. The ability to physically and chemically t- lor their properties with precision is the key factor responsible for the electronic revolution in our society over the past few decades. Semiconductor material s- tems (like silicon and GaAs-related materials) have now matured and found well established applications in electronics, optoelectronics, and several other ?elds. Other materials such as III-Nitrides were developed later, in response to needs that the above mentioned semiconductors were unable to ful?ll. The properties of I- nitrides (AlN, GaN InN, and ... Read more
Product Details
Format
Hardback
Publication date
2010
Publisher
Springer Germany
Number of pages
348
Condition
New
Series
Springer Series in Materials Science
Number of Pages
326
Place of Publication
Berlin, Germany
ISBN
9783642048289
SKU
V9783642048289
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15
About . Ed(S): Ehrentraut, Dirk; Meissner, Elke; Bockowski, Michal
Dr. Dirk Ehrentraut received a Diploma in Crystallography from the Humboldt University of Berlin, Germany and a Ph.D. in Sciences from the Institute of Applied Optics at the Swiss Federal Institute of Technology in Lausanne (EPFL), Switzerland. He joined the Tohoku University end of 2003 and is currently a visiting professor of the Institute of Multidisciplinary Research of Advanced Materials. ... Read more
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