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Mosfet Models for VLSI Circuit Simulation
Narain Arora
€ 127.01
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Description for Mosfet Models for VLSI Circuit Simulation
Paperback. Series: Computational Microelectronics. Num Pages: 605 pages, biography. BIC Classification: PBKS; TBJ; TJF; TJFD; UMZ. Category: (P) Professional & Vocational. Dimension: 244 x 170 x 32. Weight in Grams: 1072.
Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without ... Read more
Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without ... Read more
Product Details
Format
Paperback
Publication date
2012
Publisher
Springer Verlag GmbH Austria
Number of pages
605
Condition
New
Series
Computational Microelectronics
Number of Pages
605
Place of Publication
Vienna, Austria
ISBN
9783709192498
SKU
V9783709192498
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15
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