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Hamid Bentarzi - Transport in Metal-Oxide-Semiconductor Structures - 9783642163036 - V9783642163036
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Transport in Metal-Oxide-Semiconductor Structures

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Description for Transport in Metal-Oxide-Semiconductor Structures Hardback. Reviewing the state-of-the-art in the field, this volume describes the importance of mobile ions presented in oxide structures. The text defines the MOS structure, and provides an overview of onic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides. Series: Engineering Materials. Num Pages: 106 pages, 10 black & white tables, biography. BIC Classification: PHFC; TGMT; TJFD5. Category: (P) Professional & Vocational. Dimension: 242 x 155 x 11. Weight in Grams: 320.
This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. ... Read more

Product Details

Format
Hardback
Publication date
2011
Publisher
Springer-Verlag Berlin and Heidelberg GmbH & Co. KG Germany
Number of pages
106
Condition
New
Series
Engineering Materials
Number of Pages
106
Place of Publication
Berlin, Germany
ISBN
9783642163036
SKU
V9783642163036
Shipping Time
Usually ships in 15 to 20 working days
Ref
99-15

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