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Guy Feuillet - Wide Band Gap Semiconductor Nanowires 1: Low-Dimensionality Effects and Growth - 9781848215979 - V9781848215979
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Wide Band Gap Semiconductor Nanowires 1: Low-Dimensionality Effects and Growth

€ 193.57
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Description for Wide Band Gap Semiconductor Nanowires 1: Low-Dimensionality Effects and Growth Hardback. GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. Num Pages: 352 pages, illustrations (black and white). BIC Classification: TJFC; TTB. Category: (P) Professional & Vocational. Dimension: 241 x 156 x 27. Weight in Grams: 722.

GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanisms
of ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices.

Product Details

Format
Hardback
Publication date
2014
Publisher
ISTE Ltd and John Wiley & Sons Inc United Kingdom
Number of pages
352
Condition
New
Number of Pages
352
Place of Publication
London, United Kingdom
ISBN
9781848215979
SKU
V9781848215979
Shipping Time
Usually ships in 7 to 11 working days
Ref
99-35

About Guy Feuillet
Vincent Consonni is Associate Scientist at CNRS (French National Center for Research) in France. His research has focused on the physics of crystal growth and of condensed matter for micro- and nano-structures involving compound semiconductors such as CdTe, GaN, ZnO and SnO2. He is currently working on transparent conductive materials and ZnO nanowire-based solar cells. He has published approximately 30 ... Read more

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